Thermally balanced radio frequency power transistor
US5804867A · kind A · utility
0Cited by
13References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 2, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Oct 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/125
Abstract
An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the base electrode, and is electrically connected to the first emitter electrode. Ballast resistors are formed in a substantially evenly spaced manner on each side the silicon die, in series with at least some of the electrode fingers of the first emitter electrode and in series of at least some of the electrode fingers of the second emitter electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.