Larry Leighton
21Patents
10h-index
12Co-inventors
64Inventor score
Filing activity: Aug 16, 1994 → Dec 19, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5933327A | Wire bond attachment of a integrated circuit package to a heat sink | Electricity | 211 | Expired |
| US6734728B1 | RF power transistor with internal bias feed | Electricity | 38 | Expired |
| US5488252A | Layout for radio frequency power transistors | Electricity | 21 | Expired |
| US5877555A | Direct contact die attach | Electricity | 19 | Expired |
| US6466094B2 | Gain and bandwidth enhancement for RF power amplifier package | Electricity | 15 | Expired |
| US6614308B2 | Multi-stage, high frequency, high power signal amplifier | Electricity | 15 | Expired |
| US6181006A | Thermally conductive mounting arrangement for securing an integrated circuit package to a heat sink | Electricity | 14 | Expired |
| US6455905B1 | Single chip push-pull power transistor device | Electricity | 13 | Expired |
| US6160710A | Capacitive mounting arrangement for securing an integrated circuit package to a heat sink | Electricity | 13 | Expired |
| US5889319A | RF power package with a dual ground | Electricity | 12 | Expired |
| US6583673B2 | Stability enhanced multistage power amplifier | Electricity | 10 | Expired |
| US5907180A | Ballast monitoring for radio frequency power transistors | Electricity | 10 | Expired |
| US6392298B1 | Functional lid for RF power package | Electricity | 9 | Expired |
| US6806106B2 | Bond wire tuning of RF power transistors and amplifiers | Electricity | 8 | Expired |
| US5869897A | Mounting arrangement for securing an intergrated circuit package to heat sink | Electricity | 7 | Expired |
| US6777791B2 | Multiple ground signal path LDMOS power package | Electricity | 7 | Expired |
| US5684326A | Emitter ballast bypass for radio frequency power transistors | Electricity | 6 | Expired |
| US5982000A | Resistive interconnect of transistor cells | Electricity | 6 | Expired |
| US6239475A | Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide | Electricity | 2 | Expired |
| US6077753A | Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide | Electricity | 1 | Expired |
| US5804867A | Thermally balanced radio frequency power transistor | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.