Patent · US Expired

Particle detection method and apparatus

US5805278A · kind A · utility

53Cited by
7References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 18, 1996
Grant dateSep 8, 1998
Priority date
Expiry dateJun 18, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N2201/0675
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An apparatus and method for detecting particles on a surface of a semiconductor wafer having repetitive patterns includes a laser for illuminating an area on the front surface at grazing angle of incidence with a beam of polarized light. A lens collects light scattered from the area and forms a Fourier diffraction pattern of the area illuminated. A Fourier mask blocks out light collected by the lens at locations in the Fourier diffraction pattern where the intensity is above a predetermined level indicative of background information and leaves in light at locations where the intensity is below the threshold level indicative of possible particle information. The Fourier mask includes an optically addressable spatial light modulator and a polarization discriminator. A camera detects scattered light collected from the area by the lens and not blocked out by the Fourier mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.