Circuit and method for generating a read reference signal for nonvolatile memory cells
US5805500A · kind A · utility
70Cited by
6References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1997 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Jun 18, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The current flowing through a cell to be read, forming part of a nonvolatile memory array and presenting a characteristic with a predetermined slope, is amplified N times and compared with a reference current presenting a two portion characteristic: a first portion extending between a predetermined threshold value and a trigger value, and presenting a slope equal to that of the memory cell characteristic, and a second portion extending from the trigger value, and presenting a slope amplified N times with respect to that of the cell characteristic and therefore equal to the amplified slope of the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.