Radiation-hard, low power, sub-micron CMOS on a SOI substrate

US5807771A · kind A · utility

Assignee

• Raytheon Company · US

Inventors

• Truc Q. Vu · Tustin, US
• Chen-Chi P. Chang · Newport Beach, US
• James S. Cable · Del Mar, US
• Mei Li · Nanhu, CN

Key dates

• Filing date: Jun 4, 1996
• Grant date: Sep 15, 1998
• Expiry date: Jun 4, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/953

Abstract

A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub-micron feature size on a silicon-on-insulator (SOI) substrate (12). The SOI substrate may be of several different types. The sub-micron CMOS SOI device has both a fabrication and structural complexity favorably comparable to conventional CMOS devices which are not radiation-hard. A method for fabricating the device is disclosed.