High frequency analog transistors method of fabrication and circuit implementation
US5807780A · kind A · utility
18Cited by
12References
32Claims
0Family size
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Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.