Non-uniformly nitrided gate oxide and method
US5808348A · kind A · utility
11Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which includes a polysilicon gate separated from a semiconductor substrate by a re-oxidized nitrided oxide film in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform and in which the concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. Methods are disclosed of providing the non-uniform concentrations by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.