GaN single crystal
US5810925A · kind A · utility
30Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | May 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.