Kazumasa Hiramatsu
15Patents
10h-index
26Co-inventors
68Inventor score
Filing activity: Jan 26, 1988 → May 2, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4911102A | Process of vapor growth of gallium nitride and its apparatus | Electricity | 314 | Expired |
| US5122845A | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Electricity | 137 | Expired |
| US6225650A | GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof | Electricity | 131 | Expired |
| US5770887A | Gan single crystal | Electricity | 124 | Expired |
| US6503610B2 | Group III-V compound semiconductor and method of producing the same | Emerging Cross-Sectional Technologies | 82 | Expired |
| US5218216A | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same | Electricity | 66 | Expired |
| US5846844A | Method for producing group III nitride compound semiconductor substrates using ZnO release layers | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5370738A | Compound semiconductor vapor phase epitaxial device | Chemistry; Metallurgy | 37 | Expired |
| US5810925A | GaN single crystal | Electricity | 30 | Expired |
| US8053811B2 | Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element | Electricity | 14 | Expired |
| US6756246B2 | Method for fabricating III-V group compound semiconductor | Electricity | 9 | Expired |
| US6734515B1 | Semiconductor light receiving element | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7399687B2 | Substrate of gallium nitride single crystal and process for producing the same | Electricity | 6 | Expired |
| US6844574B1 | III-V compound semiconductor | Electricity | 3 | Expired |
| US6946308B2 | Method of manufacturing III-V group compound semiconductor | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.