Semiconductor electronic device with autoaligned polysilicon and silicide control terminal

US5811335A · kind A · utility

Assignee

• Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno · IT

Inventors

• Antonello Santangelo · Mascalucia, IT
• Giuseppe Ferla · Catania, IT

Key dates

• Filing date: Jun 17, 1996
• Grant date: Sep 22, 1998
• Expiry date: Jun 17, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/66

Abstract

An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a cobalt film deposited on the polycrystalline silicon (4) and on the oxide layer (10). (FIG. 9)