Semiconductor device and method of manufacturing the same
US5811351A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 25, 1997 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Nov 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.