Low temperature dry process for stripping photoresist after high dose ion implantation
US5811358A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 1997 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Jan 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry process for stripping photoresist from a semiconductor device during the manufacturing process and after high dose ion implantation is describe. The implant-hardened surface of the photoresist is first stripped by oxygen and nitrogen/hydrogen plasma at a lower temperature (<220.degree. C.) to prevent popping problem. The bulk body of the photoresist is then stripped by oxygen and nitrogen/hydrogen plasma at a higher temperature (>220.degree. C.) to provide a faster reaction rate. The semiconductor wafer is cleaned by ammonium hydroxide and hydrogen peroxide to completely remove remaining contaminant and photoresist residuals. The three-step dry process can effectively strip the post implant photoresist so that it ensures the cleanliness of the wafer for the succeeding processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.