Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications

US5811857A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Fariborz Assaderaghi · Jefferson Valley, US
• Louis L. Hsu · Fishkill, US
• Jack A. Mandelman · Stormville, US
• Ghavam G. Shahidi · Pound Ridge, US
• Steven H. Voldman · South Burlington, US

Key dates

• Filing date: Oct 22, 1996
• Grant date: Sep 22, 1998
• Expiry date: Oct 22, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A body-coupled gated diode for silicon-on-insulator (SOI) technology is disclosed. The body-coupled gated diode is formed from an SOI field-effect transistor (FET). The body, gate and drain of the SOI FET are tied together, forming the first terminal of the diode. The source of the SOI FET forms the second terminal of the diode. Both NFETs and PFETs may be used to create the diode. An SOI circuit comprising at least one body-coupled gated diode formed from the SOI FET provides electrostatic discharge (ESD) protection and ideal diode characteristics.