Plasma ashing enhancement
US5814155A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1996 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Jun 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for enhancing sidewall polymer removal. In one embodiment of the present invention, O.sub.2 is introduced into an ashing environment at a flow rate of approximately 800 standard cubic centimeters per minute (SCCM). In the present embodiment, CF.sub.4 is also introduced into the ashing environment. The CF.sub.4 is introduced at a flow rate of approximately 80 SCCM. The ashing environment also has H.sub.2 O vapor introduced therein. In the present embodiment, the H.sub.2 O vapor is introduced into the ashing environment at a flow rate of approximately 80 SCCM. The ashing environment is used to selectively etch sidewall polymer material, thereby providing a method for removing sidewall polymer material without detrimentally etching other materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.