Semiconductor device and method for fabricating the same
US5814835A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1995 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Nov 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device of invention includes: a substrate having an insulating surface; and an element region formed by crystallizing an amorphous silicon film, the element region being provided on the insulating surface of the substrate. In the semiconductor device, the element region is constituted by a laterally crystallized region formed by crystallizing the amorphous silicon film from a linearly crystallized region crystallized by a selective introduction of catalyst elements for promoting a crystallization of the amorphous silicon film to a region surrounding the linearly crystallized region by performing a heat-treatment, and a concentration of the catalyst elements in at least one of the laterally crystallized region and the linearly crystallized region is controlled by a line width of an introduction setting region having a linear planar pattern, the line width being set so as to selectively introduce the catalyst elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.