Light emitting semiconductor element with ZN doping
US5814838A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
Abstract
An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer of either n type AlGaInP or n type AlInP semiconductor material on one side of the active layer, and a p type cladding layer of p type AlGaInP or p type AlInP semiconductor material on another side of the active layer. Unlike the conventional belief that the active layer should be as free as possible from the infiltration of Zn used in the p type cladding layer as an impurity to determine its p conductivity type, and hence as high in crystallinity as possible, Zn is positively doped into the active layer with a concentration of 1.times.10.sup.16 -5.times.10.sup.17 cm.sup.-3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.