Stamp for a lithographic process
US5817242A · kind A · utility
158Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Aug 1, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7076
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.