Method of forming airbridged metallization for integrated circuit fabrication
US5817446A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Oct 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an airbridge for interconnecting metal contacts on an integrated circuit. The airbridge is formed by initially patterning a support photoresist between the metal contacts to be interconnected, over the metal contact to be crossed. The pattern support photoresist is flood exposed with UV light and subsequently baked at a relatively high temperature to cause the support photoresist to flow into a generally spherical shape. The airbridged metal lines are patterned over the spherically shaped support photoresist. Excess metallization is lifted off the support photoresist and the photoresist used to pattern the airbridge is removed, forming an airbridge with curvature along both its width and length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.