Process for the creation of a thermal SiO.sub.2 layer with extremely uniform layer thickness

US5817581A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas Bayer · Igersheim, DE
• Johann Greschner · Neckartenzlingen, DE
• Klaus Meissner · Herrenberg, DE

Key dates

• Filing date: Aug 26, 1996
• Grant date: Oct 6, 1998
• Expiry date: Aug 26, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a reproducible process for making an SiO.sub.2 layer by thermal oxidation which assures an extremely uniform thickness of the SiO.sub.2 layer of approximately 1%. The process of the invention comprises the steps growing an initial layer of SiO.sub.2 to a defined minimal thickness by dry oxidation and increasing the thickness of the initial layer by simultaneous wet and dry oxidation until the desired final thickness is reached.