Silicon carbide metal diffusion barrier layer
US5818071A · kind A · utility
115Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1995 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Feb 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material. This advancement allows for the use of low resistivity metals and low dielectric constant dielectric layers in integrated circuits and wiring boards.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.