Inventor · Midland, MI, US

Mark Loboda

36Patents
11h-index
38Co-inventors
75Inventor score

Filing activity: Dec 24, 1990 → Oct 7, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6159871A Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Electricity 244 Expired
US5818071A Silicon carbide metal diffusion barrier layer Electricity 115 Expired
US5465680A Method of forming crystalline silicon carbide coatings Chemistry; Metallurgy 70 Expired
US7736728B2 Coated substrates and methods for their preparation Emerging Cross-Sectional Technologies 58 Expired
US5693565A Semiconductor chips suitable for known good die testing Electricity 57 Expired
US6593655B1 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Electricity 44 Expired
US6667553B2 H:SiOC coated substrates Electricity 37 Expired
US5415126A Method of forming crystalline silicon carbide coatings at low temperatures Chemistry; Metallurgy 34 Expired
US5436029A Curing silicon hydride containing materials by exposure to nitrous oxide Electricity 24 Expired
US5380553A Reverse direction pyrolysis processing Chemistry; Metallurgy 23 Expired
US6268262A Method for forming air bridges Electricity 15 Expired
US9018639B2 Flat SiC semiconductor substrate Electricity 11 Active
US6593248B2 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Electricity 10 Expired
US8940614B2 SiC substrate with SiC epitaxial film Electricity 10 Active
US9738991B2 Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion Emerging Cross-Sectional Technologies 9 Active
US9165779B2 Flat SiC semiconductor substrate Electricity 9 Active
US9797064B2 Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion Emerging Cross-Sectional Technologies 9 Active
US9337277B2 High voltage power semiconductor device on SiC Electricity 6 Active
US5820923A Curing silica precursors by exposure to nitrous oxide Electricity 6 Expired
US8860040B2 High voltage power semiconductor devices on SiC Electricity 6 Active
US9279192B2 Method for manufacturing SiC wafer fit for integration with power device manufacturing technology Electricity 5 Active
US10002760B2 Method for manufacturing SiC wafer fit for integration with power device manufacturing technology Electricity 3 Active
US5501875A Metal coated silica precursor powders Performing Operations; Transporting 2 Expired
US5863595A Thick ceramic coatings for electronic devices Electricity 2 Expired
US8765091B2 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes Chemistry; Metallurgy 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.