Polycide film
US5818092A · kind A · utility
57Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1997 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Jan 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.