Gang Bai
32Patents
15h-index
22Co-inventors
81Inventor score
Filing activity: Nov 8, 1995 → May 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6130123A | Method for making a complementary metal gate electrode technology | Electricity | 122 | Expired |
| US6373111B1 | Work function tuning for MOSFET gate electrodes | Electricity | 106 | Expired |
| US6492217B1 | Complementary metal gates and a process for implementation | Electricity | 93 | Expired |
| US5714418A | Diffusion barrier for electrical interconnects in an integrated circuit | Electricity | 64 | Expired |
| US5818092A | Polycide film | Electricity | 57 | Expired |
| US6166417A | Complementary metal gates and a process for implementation | Electricity | 50 | Expired |
| US6204103A | Process to make complementary silicide metal gates for CMOS technology | Electricity | 43 | Expired |
| US5861340A | Method of forming a polycide film | Electricity | 41 | Expired |
| US6265258A | Method for making a complementary metal gate electrode technology | Electricity | 40 | Expired |
| US5889331A | Silicide for achieving low sheet resistance on poly-Si and low Si consumption in source/drain | Electricity | 21 | Expired |
| US6534837B1 | Semiconductor device | Electricity | 19 | Expired |
| US6737710B2 | Transistor structure having silicide source/drain extensions | Electricity | 17 | Expired |
| US7111203B2 | Method for implementing data backup and recovery in computer hard disk | Physics | 16 | Expired |
| US6794232B2 | Method of making MOSFET gate electrodes with tuned work function | Electricity | 16 | Expired |
| US5960316A | Method to fabricate unlanded vias with a low dielectric constant material as an intraline dielectric | Electricity | 15 | Expired |
| US6528856B1 | High dielectric constant metal oxide gate dielectrics | Electricity | 13 | Expired |
| US6790731B2 | Method for tuning a work function for MOSFET gate electrodes | Electricity | 13 | Expired |
| US6025254A | Low resistance gate electrode layer and method of making same | Electricity | 10 | Expired |
| US6365971B1 | Unlanded vias with a low dielectric constant material as an intraline dielectric | Electricity | 8 | Expired |
| US6998357B2 | High dielectric constant metal oxide gate dielectrics | Electricity | 7 | Expired |
| US8581353B2 | Multi-layer gate dielectric | Electricity | 5 | Active |
| US5977634A | Diffusion barrier for electrical interconnects in an integrated circuit | Electricity | 3 | Expired |
| US7187044B2 | Complementary metal gate electrode technology | Electricity | 3 | Expired |
| US11190991B2 | Signal transmission method and device, and computer storage medium | Electricity | 2 | Active |
| US10992409B2 | Wireless signal transmission method and device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.