Multi-layer susceptor for rapid thermal process reactors
US5820686A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 2, 1996 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Feb 2, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A RTP reactor susceptor is a multi-layer structure. A first layer of the RTP susceptor is a thin layer of preferably silicon carbide, graphite, or silicon carbide coated graphite with a thickness less than about 6 mm, with an emissivity such that the first layer radiates heat, and with thermal heat transfer characteristics such that the first layer facilitates maintaining a substrate or substrates supported by the susceptor at a uniform temperature, and facilitates maintaining uniform process gas characteristics over the substrates. A second layer of the susceptor is transparent to the heat source of the RTP reactor and provides a rigid, stable platform for the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.