Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding
US5821138A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1996 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Feb 16, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.