Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article
US5821171A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1995 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Mar 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality interface between a GaAs-based semiconductor and a Ga.sub.2 O.sub.3 dielectric an be formed if the semiconductor surface is caused to have less than 1% of a monolayer impurity coverage at completion of the first monolayer of the Ga.sub.2 O.sub.3 on the surface. This is achieved, for instance, by preparing the surface of a GaAs wafer under UHV conditions in a first growth chamber, transferring the wafer through a transfer module under UHV to a second growth chamber that is also under UHV, and growing the dielectric by evaporation of Ga.sub.2 O.sub.3 from a solid source, the process carried out such that the integrated impurity exposure of the surface is at most 100 Langmuirs. Articles according to the invention have low interface state density (<10.sup.11 /cm.sup.2 .multidot.eV) and interface recombination velocity (<10.sup.4 cm/s). Semiconductor/Ga.sub.2 O.sub.3 structures according to the invention can be used advantageously in a variety of electronic or optoelectronic devices, e.g., GaAs-based MOS-FETs, HBTs, lasers on solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.