Antifuse structures

US5821558A · kind A · utility

Assignee

• VLSI Technology, Inc. · US

Inventors

• Yu-Pin Han · Dallas, US
• Ying-Tsong Loh · Saratoga, US
• Ivan Sanchez · Stockholm, SE

Key dates

• Filing date: Feb 3, 1997
• Grant date: Oct 13, 1998
• Expiry date: Feb 3, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B20/25

Abstract

An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by an ion-implantation of a neutral species and a dopant species into a deposited layer of amorphous silicon, such that the antifuse structure will have a stable conductive link in a programmed state and such that it will be less susceptible to off-state leakage in an unprogrammed state. A method for making an antifuse structure includes forming a lower electrode, depositing an amorphous silicon layer over the lower electrode, ion-implanting a neutral species and a dopant species into the amorphous silicon layer, and forming an upper electrode over the amorphous silicon layer.