Semiconductor device formed within asymetrically-shaped seed crystal region
US5821562A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1995 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | May 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/016
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced catalyst elements efficiently diffuse only inside the island-patterned amorphous silicon films. As a result, a high-quality crystalline silicon film, having the crystal growth direction aligned in one direction and having no grain boundaries, is obtained. Using the thus formed crystalline silicon film, semiconductor devices having a high performance and stable characteristics are fabricated efficiently over the entire substrate, irrespective of the size of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.