Multipoint temperature monitoring apparatus for semiconductor wafers during processing
US5823681A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Feb 29, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer. The system includes a semiconductor wafer emissivity compensation station for measuring the reflectivity of the wafer at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe which is optically coupled to a semiconductor process chamber. The probe senses wafer self emission using one or more optical detectors and a light modulator. A background temperature determining mechanism independently senses the temperature of a source of background radiation. Finally, a mechanism calculates the temperature of the semiconductor wafer based on the reflectivity, self-emission and background temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.