Hydrocarbon-enhanced dry stripping of photoresist
US5824604A · kind A · utility
54Cited by
18References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Jan 23, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Means for increasing the selectivity of photoresist stripping to oxide etching are disclosed. A plasma of an oxidizing gas, a fluoride-containing compound, and a hydrocarbon contains reactive species that preferentially strip photoresist from a substrate with little etching of oxide on the substrate's surface when the reactive species contact the substrate. The reactor, compositions, and methods disclosed are particularly useful in processes for etching silicon wafers to form semiconductor or microelectromechanical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.