Composite memory material comprising a mixture of phase-change memory material and dielectric material
US5825046A · kind A · utility
390Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Oct 28, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.