Patent · US Expired

Composite memory material comprising a mixture of phase-change memory material and dielectric material

US5825046A · kind A · utility

390Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 28, 1996
Grant dateOct 20, 1998
Priority date
Expiry dateOct 28, 2016

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/72
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.