Semiconductor volatile/nonvolatile memory
US5825064A · kind A · utility
9Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1993 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Mar 3, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor nonvolatile memory has integrated memory cells, each being operative to carry out writing and reading of information in random-access basis and having an electric charge storage structure effective to memorize the information in nonvolatile state. The information is temporarily written into each memory cell in volatile state, and thereafter the temporarily written information is written at one into the respective electric charge storage structure of each memory cell, thereby effecting quick writing of nonvolatile information into the respective memory cells of multi-bits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.