Semiconductor integrated circuit device
US5825193A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1995 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Dec 18, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2849
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor integrated circuit apparatus having a plurality of semiconductor integrated circuit devices, each of the plurality of semiconductor devices including a semiconductor integrated circuit formed on a semiconductor substrate, a reference voltage input terminal formed on the semiconductor substrate which is operative for receiving a reference voltage input from outside of the semiconductor substrate, and a burn-in voltage control circuit formed on the semiconductor substrate operative for receiving the reference voltage which is output from the reference voltage input terminal. The burn-in voltage control circuit generates a burn-in supply voltage which is input to the semiconductor integrated circuit, and also maintains the burn-in supply voltage at the reference voltage level such that each of the integrated circuits receives a burn-in supply voltage having the same voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.