Hot-wall CVD method for forming a ferroelectric film
US5827571A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1997 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Sep 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.