Patent · US Expired

Additive metalization using photosensitive polymer as RIE mask and part of composite insulator

US5827780A · kind A · utility

17Cited by
3References
16Claims
0Family size

Inventors

Key dates

Filing dateApr 1, 1996
Grant dateOct 27, 1998
Priority date—
Expiry dateApr 1, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The surface of an integrated circuit, which uses reactive ion etching to pattern metal interconnection, is protected with two insulating layers on the surface. The first layer is a conventional silicon dioxide. The second layer is a photosensitive polymer which is the same as the material used for subsequent metalization of interconnection using the reactive ion etching technique. When the second layer is used, the reactive ion etching cannot attack the silicon dioxide. A trench can be cut through the two insulating layers, using a window in the photosensitive polymer as a mask, to serve as a via hole for metal to contact the substrate

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.