Thomas Chang
27Patents
15h-index
22Co-inventors
81Inventor score
Filing activity: Nov 21, 1984 → Dec 3, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4698787A | Single transistor electrically programmable memory device and method | Electricity | 309 | Expired |
| US4929936A | LED illuminated sign | Physics | 103 | Expired |
| US6355524B1 | Nonvolatile memory structures and fabrication methods | Electricity | 98 | Expired |
| US5701013A | Wafer metrology pattern integrating both overlay and critical dimension features for SEM or AFM measurements | Electricity | 97 | Expired |
| US4868619A | Single transistor electrically programmable memory device and method | Electricity | 77 | Expired |
| US4769340A | Method for making electrically programmable memory device by doping the floating gate by implant | Electricity | 70 | Expired |
| US6008515A | Stacked capacitor having improved charge storage capacity | Electricity | 47 | Expired |
| US5672243A | Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5843822A | Double-side corrugated cylindrical capacitor structure of high density DRAMs | Electricity | 40 | Expired |
| US5930631A | Method of making double-poly MONOS flash EEPROM cell | Electricity | 28 | Expired |
| US5703388A | Double-poly monos flash EEPROM cell | Electricity | 24 | Expired |
| US5789297A | Method of making EEPROM cell device with polyspacer floating gate | Electricity | 24 | Expired |
| US5858867A | Method of making an inverse-T tungsten gate | Electricity | 20 | Expired |
| US5851898A | Method of forming stacked capacitor having corrugated side-wall structure | Electricity | 19 | Expired |
| US5827780A | Additive metalization using photosensitive polymer as RIE mask and part of composite insulator | Electricity | 17 | Expired |
| US6043547A | Circuit structure with an anti-reflective layer | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5789267A | Method of making corrugated cell contact | Electricity | 14 | Expired |
| US6057576A | Inverse-T tungsten gate apparatus | Electricity | 13 | Expired |
| US5909621A | Single-side corrugated cylindrical capacitor structure of high density DRAMs | Electricity | 12 | Expired |
| US6365455B1 | Flash memory process using polysilicon spacers | Electricity | 10 | Expired |
| US6162724A | Method for forming metalization for inter-layer connections | Electricity | 8 | Expired |
| US5827783A | Stacked capacitor having improved charge storage capacity | Electricity | 7 | Expired |
| US6617636B2 | Nonvolatile memory structures and fabrication methods | Electricity | 6 | Expired |
| US5821564A | TFT with self-align offset gate | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5724825A | Automatic temperature controlling system | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.