Microelectronic component and process for its production

US5828076A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Harald Gossner · Riemerling, DE
• Ignaz Eisele · Icking, DE
• Lothar Risch · Neubiberg, DE
• Erwin Hammerl · Stormville, US

Key dates

• Filing date: Oct 17, 1996
• Grant date: Oct 27, 1998
• Expiry date: Oct 17, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/813
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In its gate region (10), a silicon MOS technology component has a surface structure (6) having edges and/or vertices at which inversion regions, suitable as quantum wires or quantum dots, are preferentially formed when a gate voltage is applied. The surface structure is preferably formed as a silicon pyramid (6) by local molecular beam epitaxy.