Semiconductor device and production method thereof
US5828120A · kind A · utility
13Cited by
5References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1997 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Feb 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device equipped on the same substrate thereof with a first area isolated for device isolation by a first device isolation structure and with a second area isolated for device isolation by a second device isolation structure, wherein the thickness of the substrate inside the first area is different from the thickness of the substrate inside the second area, and the first and second device isolation structures are buried into the substrate so as to bring their tops into about the same level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.