Semiconductor device having perfluorinated and non-fluorinated parylene intermetal dielectric
US5828132A · kind A · utility
10Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising first and second interconnect levels (14) and (16) is described. Mixed polymeric intermetal dielectrics (46), (48) and (50) are used to separate conductive elements (22), (24), (26), (36) and (38), respectively. The intermetal dielectric bodies (46), (48) and (50) comprise a mixture of perfluorinated and non-fluorinated parylene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.