Methods and apparatus for sputtering with rotating magnet sputter sources
US5830327A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 2, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Oct 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron sputtering source for forming a sputtered film on a substrate in a magnetron sputtering apparatus includes a target having a surface from which material is sputtered and a magnet assembly that is rotatable about an axis of rotation with respect to the target. The magnet assembly produces on the target an erosion profile that is calculated to yield a desired depositional thickness distribution and inventory. A method for configuring the rotatable magnet assembly includes the steps of determining an optimal erosion profile that yields the desired depositional thickness distribution and inventory, determining a plasma track on the surface of the target that produces an acceptable approximation to the optimal erosion profile, and determining a magnet structure that produces the plasma track.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.