Method for forming a metal pattern on a substrate
US5830774A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Jun 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a metal pattern on a substrate (11) includes forming a dielectric stack (14) on a major surface (12) of the substrate (11) and forming a mask (22) on the dielectric stack (14). The dielectric stack (14) includes an aluminum nitride layer (16) serving as an etch stop layer between two dielectric layers (15, 17). An opening is formed in the dielectric stack (14) via successive etching. The etching of the dielectric layer (15) between the aluminum nitride layer (16) and the substrate (11) undercuts the aluminum nitride layer (16). A metal layer (30) is deposited on the major surface through the opening via sputtering. The metal layer (30) on the major surface is distinctively separated from a metal layer (34) on the edge of the opening. The mask (22) is dissolved in a solvent, thereby lifting-off a metal layer (34) deposited on the mask (22).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.