Patent · US Expired

Process for reducing halogen concentration in a material layer during semiconductor device fabrication

US5830802A · kind A · utility

17Cited by

4References

17Claims

0Family size

Assignee

Motorola, Inc. · US

Inventors

Hsing-Huang Tseng · Austin, US
Philip J. Tobin · Austin, US
Bikas Maiti · Austin, US

Key dates

Filing date	Aug 31, 1995
Grant date	Nov 3, 1998
Priority date	—
Expiry date	Aug 31, 2015

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/147
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for reducing halogen concentration in a material layer (56) includes the deposition of a dielectric layer (58) overlying the material layer (56). An annealing process is carried out to diffuse halogen atoms from the material layer (56) into the overlying dielectric layer (58). Once the diffusion process is complete, the dielectric layer (58) is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.