Radhard mosfet with thick gate oxide and deep channel region
US5831318A · kind A · utility
9Cited by
17References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Jul 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. The gate oxide thickness is increased to more than 1250 .ANG. for a device with a reverse voltage rating of 250 volts and the channel concentration is reduced to maintain a low threshold voltage. The thicker oxide prevents single event damage under reverse bias voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.