Process for producing a luminous element of group III nitride semi-conductor

US5834326A · kind A · utility

Assignee

• Pioneer Electronic Corporation · JP

Inventors

• Mamoru Miyachi · Tokyo, JP
• Toshiyuki Tanaka · Tokyo, JP
• Yoshinori Kimura · Yokohama, JP
• Hirokazu Takahashi · Hitachinaka, JP
• Hitoshi Sato · Kawasaki, JP
• Atsushi Watanabe · Yamanashi, JP
• Hiroyuki Ota · Saitama, JP
• Isamu Akasaki · Nagoya, JP
• Hiroshi Amano · Ebeye, US

Key dates

• Filing date: Dec 11, 1996
• Grant date: Nov 10, 1998
• Expiry date: Dec 11, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/113

Abstract

A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.