Hiroshi Amano
156Patents
22h-index
191Co-inventors
93Inventor score
Filing activity: Jul 15, 1974 → Mar 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4911102A | Process of vapor growth of gallium nitride and its apparatus | Electricity | 314 | Expired |
| US5247533A | Gallium nitride group compound semiconductor laser diode | Electricity | 190 | Expired |
| US5389571A | Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer | Emerging Cross-Sectional Technologies | 171 | Expired |
| US5122845A | Substrate for growing gallium nitride compound-semiconductor device and light emitting diode | Electricity | 137 | Expired |
| US5862167A | Light-emitting semiconductor device using gallium nitride compound | Electricity | 111 | Expired |
| US5239188A | Gallium nitride base semiconductor device | Emerging Cross-Sectional Technologies | 109 | Expired |
| US5620557A | Sapphireless group III nitride semiconductor and method for making same | Emerging Cross-Sectional Technologies | 99 | Expired |
| US5281830A | Light-emitting semiconductor device using gallium nitride group compound | Electricity | 87 | Expired |
| US5218216A | Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same | Electricity | 66 | Expired |
| US5846844A | Method for producing group III nitride compound semiconductor substrates using ZnO release layers | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5834326A | Process for producing a luminous element of group III nitride semi-conductor | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5186192A | Apparatus for cleaning silicon wafer | Emerging Cross-Sectional Technologies | 39 | Expired |
| US5583879A | Gallum nitride group compound semiconductor laser diode | Electricity | 38 | Expired |
| US5370738A | Compound semiconductor vapor phase epitaxial device | Chemistry; Metallurgy | 37 | Expired |
| US5604763A | Group III nitride compound semiconductor laser diode and method for producing same | Electricity | 36 | Expired |
| US7361948B2 | Filter function-equipped optical sensor and flame sensor | Physics | 33 | Expired |
| US3998691A | Novel method of producing radioactive iodine | Physics | 33 | Expired |
| US6229151A | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency | Electricity | 30 | Expired |
| US5889806A | Group III nitride compound semiconductor laser diodes | Electricity | 28 | Expired |
| US5496766A | Method for producing a luminous element of III-group nitride | Electricity | 24 | Expired |
| US6534791B1 | Epitaxial aluminium-gallium nitride semiconductor substrate | Electricity | 23 | Expired |
| US6849472B2 | Nitride semiconductor device with reduced polarization fields | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6569704B1 | Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency | Electricity | 22 | Expired |
| US5905276A | Light emitting semiconductor device using nitrogen-Group III compound | Electricity | 22 | Expired |
| US7084767B2 | Vehicle-mounted apparatus and method for outputting information about articles in vehicle | Physics | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.