Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF plasma process
US5834379A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Jul 16, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C8/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.