Electron beam exposure apparatus and method, and device manufacturing method
US5834783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1997 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Mar 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/1534
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.