Precharge-enable self boosting word line driver for an embedded DRAM
US5835438A · kind A · utility
4Cited by
3References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 24, 1996 |
| Grant date | Nov 10, 1998 |
| Priority date | — |
| Expiry date | Dec 24, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4085
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of driving a DRAM word line comprising initiating a word line active cycle from a leading edge of a row enable signal, applying a first voltage to a word line following and as a result of said leading edge, receiving a trailing edge of the enable signal and applying a boosted voltage to the word line following and as a result of the trailing edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.