Method for fabricating a semiconductor device
US5837600A · kind A · utility
2Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | Jun 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for fabricating a semiconductor device, especially suitable for a highly-integrated semiconductor device. In the method, a lower tungsten silicide film having an amorphous construction is formed on a poly silicon film on a gate oxide film formed on a semiconductor substrate. On the lower tungsten silicide film, an upper tungsten silicide film having a plurality of small grains between which gaps are defined. Thereafter, oxide films are formed on the crystallized grains by heat treatment under an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.