Planarization method by use of particle dispersion and subsequent thermal flow
US5837603A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1996 |
| Grant date | Nov 17, 1998 |
| Priority date | — |
| Expiry date | May 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of smoothing irregularities in a surface of a semiconductor device using flowable particles which are dispersed onto the surface of the semiconductor device. The irregularities in the surface of the semiconductor device are filled with flowable particles smaller in size than the irregularities which are to be smoothed, and the particles are thereafter heated so that they flow and fill the irregularities, forming a smooth layer of flowable particle material which does not require polishing. The flowable particles may be mixed with non-flowable particles which are encapsulated in the layer of flowable particle material to form a homogeneous layer. The non-flowable particles may be augmentors which modify the properties of the layer. The particles may be dispersed with a spin-on process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.